Si7388DP
Vishay Siliconix
TYPICAL CHARACTERISTICS
2
25 °C, unless otherwise noted
1
Duty Cycle = 0.5
0.2
0.1
0.1
Single Pulse
0.01
0.05
0.02
10 - 4
10 - 3
10 - 2
10 - 1
1
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see http://www.vishay.com/ppg?71919 .
Document Number: 71919
S-80438-Rev. E, 03-Mar-08
www.vishay.com
5
相关PDF资料
SI7390DP-T1-GE3 MOSFET N-CH D-S 30V PPAK 8SOIC
SI7403BDN-T1-GE3 MOSFET P-CH D-S 20V 1212-8 PPAK
SI7404DN-T1-E3 MOSFET N-CH D-S 30V PPAK 1212-8
SI7409ADN-T1-GE3 MOSFET P-CH D-S 30V PPAK 1212-8
SI7413DN-T1-GE3 MOSFET P-CH D-S 20V PPAK 1212-8
SI7421DN-T1-GE3 MOSFET P-CH D-S 30V PPAK 1212-8
SI7423DN-T1-GE3 MOSFET P-CH D-S 30V PPAK 1212-8
SI7425DN-T1-GE3 MOSFET P-CH D-S 12V PPAK 1212-8
相关代理商/技术参数
SI7390DP 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:N-Channel 30-V (D-S) Fast Switching WFET
SI7390DP-T1 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:N-Channel 30-V (D-S) Fast Switching WFET
SI7390DP-T1-E3 功能描述:MOSFET 30V 15A 1.8W RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
SI7390DP-T1-GE3 功能描述:MOSFET 30V 15A 5.0W 9.5mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
SI7392ADP 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:N-Channel Reduced Qg, Fast Switching WFET
SI7392ADP-T1-E3 功能描述:MOSFET 30V 30A 27.5W RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
SI7392ADP-T1-GE3 功能描述:MOSFET 30V 30A 27.5W 7.5mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
SI7392DP 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:N-Channel Reduced Qg, Fast Switching WFET